PART |
Description |
Maker |
MRF166W |
40 W, 500 MHz, TMOS broadband RF power FET
|
MA-Com MACOM[Tyco Electronics]
|
MRF158 |
TMOS BROADBAND RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor MOTOROLA[Motorola, Inc] Motorola, Inc.
|
MTD1N50E |
TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM
|
Motorola, Inc
|
MTU18N50E_D ON2666 ON2665 |
From old datasheet system TMOS POWER FET 18 AMPERES 500 VOLTS
|
ON Semi
|
MTY20N50E_D ON2714 |
TMOS POWER FET 20 AMPERES 500 VOLTS From old datasheet system
|
ON Semi
|
NMA5109-A1M |
High Power Broadband Noise Sources 100 Hz to 500 MHz
|
Micronetics, Inc.
|
BF799 |
RF-Bipolar - For linear broadband amplifier application up to 500 MHz and as SAW filter driver in TV tuners
|
Infineon
|
MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MTSF1P02HD ON2655 |
SINGLE TMOS POWER MOSFET SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM From old datasheet system
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor Motorola, Inc
|